Part Number | IXTY2R4N50P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fujitsu |
Description | MOSFET N-CH 500V 2.4A DPAK |
Series | PolarHV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5.5V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 6.1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 55W (Tc) |
Rds On (Max) @ Id, Vgs | 3.75 Ohm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IXTY2R4N50P
FUJT
18650
0.18
Fairstock HK Limited
IXTY2R4N50P
FUJITUS
2365
1.6525
Xinye International Technology Limited
IXTY2R4N50P
FUJLTSU
16000
3.125
Finestock Electronics HK Limited
IXTY2R4N50P
FUJI
18000
4.5975
Bonase Electronics (HK) Co., Limited
IXTY2R4N50P
FUJITSU
5000
6.07
KYO Inc.