Description
IRF1010N . HEXFET Power MOSFET. 3/16/01. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 0.85. R CS. Case-to-Sink, Flat, Greased Surface. Nov 3, 2004 Uses IRF1010N data and test conditions. ss When mounted on 1! square PCB ( FRr4 or Gr10 Material ). For recommended footprint and Parameter IRF1010N IRF1010 Net Effect Reason. Chip Size 166 x 166 mils 170 x 230 mils Lower High density cell structure. Bvdss (min) 55 55 Lower New EPI Dec 11, 2003 TO-220AB Part Marking Information. EXAMPLE: IN THE ASSEMBLY LINE C. THIS IS AN IRF1010 . LOT CODE 1789. ASSEMBLED ON WW
Part Number | IRF1010N |
Brand | Fujitsu |
Image |
IRF1010N
FUJT
5702
0.53
Belt (HK) Electronics Co
IRF1010N
FUJITUS
2015
1.565
GSJX Electronic Co., Ltd
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200000
2.6
Shenzhen WTX Capacitor Co., Ltd.
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3.635
Nosin (HK) Electronics Co.
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4.67
Cicotex Electronics (HK) Limited