Part Number | FQU2N100TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fujitsu |
Description | MOSFET N-CH 1000V 1.6A IPAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
Rds On (Max) @ Id, Vgs | 9 Ohm @ 800mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
FQU2N100TU
FUJT
220360
1.5
Cinty Int'l (HK) Industry Co., Limited
FQU2N100TU
FUJITUS
3364
2.3475
Yingxinyuan INT'L (Group) Limited
FQU2N100TU
FUJLTSU
11020
3.195
Ande Electronics Co., Limited
FQU2N100TU
FUJI
106943
4.0425
N&S Electronic Co., Limited
FQU2N100/TU
FUJITSU
67000
4.89
N&S Electronic Co., Limited