Fujitsu

Description

Symbol. Parameter. Value. Unit. VCEO. Collector-Emitter Voltage (IB = 0). 350. V. VEBO. Emitter-Base Voltage (IC = 0). 5. V. IC. Collector Current. 15. A. ICM. Collector Peak Current. 30. A. IB. Base Current. 1. A. IBM. Base Peak Current. 5. A. BU941ZT. BU941ZTFP. BUB941ZT. Ptot. Total Dissipation at Tc = 25 oC. 150. 55. Parameter. Symbol. Conditions. Ratings. Unit. Drain-to-Source Voltage. VDSS. 1500. V. Gate-to-Source Voltage. VGSS. 20. V. Drain Current (DC). ID. 2. A. Drain Current (Pulse). IDP. PW 10 s, duty cycle 1%. 4. A. Allowable Power Dissipation. PD. Tc=25 C. 80. W. Channel Temperature. Tch. 150. C. Storage Stresses exceeding Maximum Ratings may damage the device. Maximum. Ratings are stress ratings only. Functional operation above the Recommended. Operating Conditions is not implied. Extended exposure to stresses above the. Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse 1.1 Structure. The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor. As can be seen from the structures shown below, the only difference lies in the additional p-zone of the IGBT. Due to the presence of this layer, holes are injected into the highly resistive n-layer and a carrier overflow is